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Mitigating electromigration, in-rush current effects, IR-voltage drop, and jitter through metal line and via matrix insertion
Mitigating electromigration, in-rush current effects, IR-voltage drop, and jitter through metal line and via matrix insertion
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机译:减轻电迁移,浪涌电流影响,IR压降以及通过金属线和通过矩阵插入产生的抖动
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摘要
Integrated circuits and methods of manufacturing such circuits are disclosed herein that feature metal line-via matrix insertion after place and route processes are performed and/or completed for the integrated circuit's layout. The metal line-via matrix consists of one or more additional metal lines and one or more additional vias that are inserted into the integrated circuit's layout at a specific point to lower the current and current density through a first conductive path that has been determined to suffer from electromigration, IR-voltage drop, and/or jitter. Specifically, the metal line-via matrix provides one or more auxiliary conductive paths to divert and carry a portion of the current that would otherwise flow through the first conductive path. This mitigates electromigration issues and IR-voltage drop along the first conductive path. It may also help alleviate problems due to jitter along the path.
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