首页> 外文会议>Surface Preparation and Cleaning Conference >Nitride Device Surface Processes: A Review of Surface Science for Power and RF Technologies with Nitrides(PPT)

【24h】

Nitride Device Surface Processes: A Review of Surface Science for Power and RF Technologies with Nitrides(PPT)

机译：氮化物装置表面流程：氮化物电力和RF技术表面科学评论（PPT）

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

1.Nitrides will become more prevalent in Power andRF technologies2.Ga-N polar bond plays a major role in surface properties3. Clever use of cleans and device physics give us clear pathways to nitride sycpess

机译：1.硝化物在功率和rf技术中将变得更加普遍2.Ga-n极键在表面特性中发挥着重要作用。巧妙地使用清洁和设备物理给我们清除氮化物的途径

著录项

来源
《Surface Preparation and Cleaning Conference》|2017年|338 p.|共17页
会议地点
作者
H.Rusty Harris;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类工程材料学;
关键词

相似文献

外文文献
中文文献
专利

1. Impact of Device Technology Processes on the Surface Properties and Biocompatibility of Group Ⅲ Nitride Based Sensors [J] . I. Cimalla, F. Will, K. Tonisch, Materialwissenschaft und Werkstofftechnik . 2006,第11期

机译：器件技术工艺对基于Ⅲ族氮化物的传感器的表面性质和生物相容性的影响
2. Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors [J] . Longobardi Giorgia, Udrea Florin, Sque Stephen, Power Electronics, IET . 2015,第12期

机译：通过测量和技术-计算机辅助设计仿真研究金属-绝缘体-半导体场效应晶体管和高电子迁移率晶体管的氮化镓/氮化镓铝/氮化镓高压晶体管中的表面电荷和陷阱
3. Development and prospects of nitride materials and devices with nonpolar surfaces [J] . Paskova T Physica status solidi, B. Basic research . 2008,第6期

机译：具有非极性表面的氮化物材料和器件的发展与前景
4. Nitride Device Surface Processes: A Review of Surface Science for Power and RF Technologies with Nitrides(PPT) [C] . H.Rusty Harris Surface Preparation and Cleaning Conference . 2017

机译：氮化物装置表面流程：氮化物电力和RF技术表面科学评论（PPT）
5. In situ investigation of titanium nitride surface dynamics: The role of surface and bulk mass transport processes [D] . Bareno, Javier 2008

机译：原位调查氮化钛表面动力学：表面和散装大众传输过程的作用
6. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices [O] . Rathnait D. Long, Paul C. McIntyre 2012

机译：氮化镓基金属氧化物半导体器件的表面制备和沉积的栅极氧化物
7. Chemical vapor deposition of silicon nitride film enhanced by surface-wave plasma for surface passivation of AlGaN/GaN device [O] . H. Okada, K. Kawakami, M. Shinohara, 2015

机译：通过表面波等离子体进行氮化硅膜的化学气相沉积，用于AlGaN / GaN装置的表面钝化
8. First-Principles Investigations of Defects and Surfaces and Their Impact on Nitride Devices [R] . Van de Walle, C. G. 2010

机译：缺陷和表面的第一性原理研究及其对氮化物器件的影响

Nitride Device Surface Processes: A Review of Surface Science for Power and RF Technologies with Nitrides(PPT)

摘要

著录项

相似文献

相关主题

期刊订阅