Proximity rapid thermal diffusion for emitter formation in silicon solar cells

摘要

Results are presented for emitters formed by the proximity rapid thermal diffusion (PRTD) process for silicon solar cells. Diffusion temperature and diffusion atmosphere are investigated as parameters for varying the emitter profile and concentration. Junction depth is approximated by ball grooving and staining to delineate the junction and examination under optical microscopy. Sheet resistance measurements are carried out by four point probe to assess doping concentration and uniformity. Ellipsometry measurements are used to monitor the oxide thickness formed during the doping process. Current-voltage profiles are used to assess the electronic properties and conversion efficiency of complete devices under 1.5AM(G) illumination.