The Development of High Performance SnO_2:F as TCOs for Thin Film Silicon Solar Ceils

摘要

High performance transparent conducting oxides have significance for optimising PV performance. The efficiency of the resulting solar cells is dependent on achieving high light scattering, low resistivity and low absorption (via low FCA). These properties have been targeted by systematic exploration of the deposition temperature in Atmospheric Pressure Chemical Vapour Deposition. Samples were then used in manufacture of single a-Si:H solar cells, which showed enhanced performance. Cells with photo-generated currents as high as 15.91 mA/cm~2 with efficiencies up to 9.4%, compared very well to cells fabricated using AGC-U with a lower current of 14.63 mA/cm~2 and 9.5% efficiency.