Operating speed measurement of photodetector based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact for detecting ultrashort pulses at wavelengths of 1.55 and 1.9 μm

摘要

We study the operating speed of high-speed photodetector based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact depending on the wavelength, radiation power, and bias voltage. The ultra-fast fiber lasers and high-speed oscilloscope were used for measurements.