ArF~*, KrF~*, and FI lasers pumped by double discharge from generator with semiconductor opening switch

摘要

Discharge and laser parameters in high-pressure gas mixtures of rare gases with F_2 under pumping by generators with inductive energy storage (IES) and semiconductor opening switch (SOS) are studied. It was shown that the pre-pulse with high pumping power formed by IES produces high-density discharge plasma and inversion population in gas mixtures under study within ～10 ns and provides both early one-set of lasing and conditions for efficient excitation of an active medium from the storage capacitor. The high-voltage pre-pulse from the IES and sharp increase of discharge current allows to form long-lived stable volume discharge. Improve of pulse duration and (or) output energy was achieved for atomic fluorine, ArF~* and KrF~* excimer lasers.