Effect of flux ratio on GaSb films grown at a low temperature on Si(111)

摘要

Researchers face the challenge of depositing single-crystalline III-V compound semiconductor films on substrates like Silicon (Si) and Germanium due to the twin crystal growth. This investigation focuses on the Sb(Antimony) to Gallium(Ga) flux ratio to generate a GaSb film which is one of the III-V compound semiconductors on Si. In this study, we have tried to find out the GaSb crystalline nature in response to varied Sb to Ga flux ratio that is Ga-rich, Sb-rich and Sb to Ga Ratio-one conditions. With the XRD $oldsymbol{arphi}$-scan pattern measurement, we found Sb-rich condition is useful in growing a High-Quality (HQ) film whereas Ga-rich condition grows an island patterned film. We observed that for a two-step growth method, if the growth of the 1^{st or buffer layer of GaSb films is performed at a low substrate temperature and a low growth rate, a single-crystalline GaSb film is deposited irrespective of Sb to Ga flux ratio where the 2nd layer was deposited at a high substrate temperature.}