Carbon-titanium multilayer films: Synthesis and characterization

摘要

To synthesize Carbon-Titanium (C-Ti) multilayer thin films deposited on silicon substrates was used Thermionic Vacuum Arc (TVA) method. The coated layers consisted of a base layer of about 100 nm of Carbon deposited at low evaporation rates. Subsequently, seven Carbon and Titanium layers were deposited alternatively on top of Carbon base layer, each of them has a final thickness up to 40 nm. In this study we obtained different batches of samples by variation of the substrate temperature between 0°C and 300°C, and the ion acceleration voltage applying a negative substrate bias voltage between 0V and -700V. To characterize the microstructure properties of as prepared C-Ti multilayer structures were used Electron Microscopy techniques (TEM, SEM, STEM) and Raman Spectroscopy. Results of tribological measurements are associated with the occurrence of atomic diffusion processes at Ti/C interface. To characterize the electrical conductive properties, the electrical resistance versus temperature have been measured.