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Thermal EMF in film resistors under focused semiconductor laser irradiation

机译:聚焦半导体激光照射下的膜电阻器中的热电EMF

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The work studies thermal EMF generation in thick-film and thin-film resistors under focused semiconductor laser irradiation.The thermal EMF in film resistors is maximum in the case of laser irradiation of the boundaries of the resistant film contact with electrodes.The signal sign depends on the polarity of resistors brought into the measurement circuit,location of the laser spot on the boundaries of the resistive film contacts with electrodes and on the edges of nonuniformities.Thermal EMF includes direct and pulsed components during local irradiation of the surface of resistors by periodic laser pulses.The frequency and duration of the edge of unipolar EMF pulses on the electrodes of the resistors are equal to the frequency and duration of the laser pulses,respectively.In silver-palladium thick-film resistors,the maximum of the thermal EMF signal can be used to determine the boundaries of the surface section with palladium reduced by hydrogen.
机译:在聚焦半导体激光照射下的厚膜和薄膜电阻器中的热电EMF在薄膜电阻中产生热电EMF。在激光滤膜与电极的抗膜接触的边界的情况下,膜电阻器中的热EMF最大。信号标志取决于关于进入测量电路的电阻器的极性,激光点对电阻膜与电极的边界的位置,并且在非均匀性边缘上。热EMF包括通过周期性的电阻器局部照射期间的直接和脉冲分量激光脉冲。电阻器电极上的单极EMF脉冲边缘的频率和持续时间分别等于激光脉冲的频率和持续时间。在银钯厚膜电阻器中,热电EMF信号的最大值可用于确定用氢降低钯的表面部分的边界。

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