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Deposition Voltage Research of CdSe Quantum Dots Sensitized TiO_2 Solar Cell

机译:CDSE量子点敏化TiO_2太阳能电池的沉积电压研究

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TiO_2 nanocrystalline semiconductor film was made on the titanium (Ti) substrate by hydrothermal method,and then prepared the CdSe quantum dot layer on the face of the TiO_2 nanocrystalline semiconductor film by electrochemical deposition method. We studied the affect of deposition voltage of the CdSe quantum dots' growth, finding that when the deposition voltage was -1.3V,CdSe quantum dots grown best.However, In terms of CdSe/TiO_2 as the light-anode,using electricity chemistry workstation to test,We gain a solar cell with Short circuit current density of 1.45×10~(-3)A-cm~(-2) and the open circuit voltage of 0.24 V.
机译:通过水热法在钛(Ti)底物上制备TiO_2纳米晶体半导体膜,然后通过电化学沉积方法在TiO_2纳米晶体半导体膜的面上制备CDSE量子点层。我们研究了CDSE量子点的沉积电压的影响,发现当沉积电压为-1.3V时,CDSE量子点最佳地生长。以CDSE / TiO_2为光阳极,使用电气化学工作站。为了测试,我们获得的太阳能电池,短路电流密度为1.45×10〜(-3)A-cm〜(-2),开路电压为0.24V。

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