The General Antiparticle Spectrometer (GAPS) experiment is an indirect dark matter search that aims to detect low-energy antideuterons resulting from dark matter annihilations and decays in the Galactic halo. Layers of semiconducting lithium-drifted silicon (Si(Li)) tracking detectors are essential to the success of the GAPS detection and background rejection scheme, requiring ～22.5 square meters of Si(Li) active area with a channel energy resolution of ～3 keV. To produce this large volume of detectors, we are pursuing a process that can provide the required performance and high yield at approximately two orders of magnitude less cost per unit area than commercially acquired detectors.
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