Fractional Quantum Conductance In Edge Channels Of Silicon Quantum Wells

摘要

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultranarrow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, G_(xx), as a function of the voltage applied to the Hall contacts, V_(xy), to a maximum of 4e~2/h. In addition to the standard plateau, 2e~2/h, the variations of the V_(xy) voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractions.