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Charge equilibration in integer and fractional quantum Hall edge channels in a generalized Hall-bar device

机译:广义霍尔棒器件中整数和分数量子霍尔边缘通道中的电荷平衡

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摘要

Charge equilibration between quantum Hall edge states can be studied to reveal the geometric structure of edge channels not only in the integer quantum Hall (IQH) regime but also in the fractional quantum Hall (FQH) regime, particularly for hole-conjugate states. Here we report on a systematic study of charge equilibration in both IQH and FQH regimes by using a generalized Hall bar, in which a quantum Hall state is nested in another quantum Hall state with different Landau filling factors. This provides a feasible way to evaluate equilibration in various conditions even in the presence of scattering in the bulk region. The validity of the analysis is tested in the IQH regime by confirming consistency with previous works. In the FQH regime, we find that the equilibration length for counterpropagating delta nu = 1 and delta nu = -1/3 channels along a hole-conjugate state at Landau filling factor nu = 2/3 is much shorter than that for copropagating delta nu = 1 and delta nu = 1/3 channels along a particle state at nu = 4/3. The difference can be associated with the distinct geometric structures of the edge channels. Our analysis with generalized Hall-bar devices would be useful in studying edge equilibration and edge structures.
机译:可以研究量子霍尔边缘状态之间的电荷平衡,以揭示边缘通道的几何结构,不仅在整数量子霍尔(IQH)体制中,而且在分数量子霍尔(FQH)体制中,特别是对于空穴共轭态,也是如此。在这里,我们报告了通过使用广义霍尔棒对IQH和FQH体制中的电荷平衡进行的系统研究,其中一个量子霍尔状态嵌套在另一个具有不同Landau填充因子的量子霍尔状态中。这提供了一种评估各种条件下平衡的可行方法,即使在主体区域中存在散射的情况下也是如此。通过确认与先前工作的一致性,在IQH体系中测试了分析的有效性。在FQH体制中,我们发现,在Landau填充因子nu = 2/3时,沿空穴共轭状态反向传播δnu = 1和δnu = -1/3通道的平衡长度比共同传播δnu的平衡长度短得多。 = 1和del nu = 1/3沿nu = 4/3的粒子状态。差异可以与边缘通道的不同几何结构相关。我们用广义霍尔杆器件进行的分析将有助于研究边缘平衡和边缘结构。

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  • 来源
    《Physical review》 |2019年第19期|195304.1-195304.9|共9页
  • 作者单位

    Tokyo Inst Technol, Dept Phys, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528551, Japan;

    Tokyo Inst Technol, Dept Phys, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528551, Japan;

    Tokyo Inst Technol, Dept Phys, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528551, Japan|NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan;

    NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan;

    NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan;

    Tokyo Inst Technol, Dept Phys, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528551, Japan;

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