Cryogenic DC Characterization of InAs/Al_(80)Ga_(20)Sb Self-Switching Diodes

摘要

DC characterization of an InAs/Al_(80)Ga_(20)Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V non-linearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.