Simulation and Fabrication of InGaAs Planar Gunn Diode on InP Substrate

摘要

This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 13 μm long and 120 micron wide and the measured and simulated results are in excellent agreement.