Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

摘要

In this work, the presence of anomalous low-frequency fluctuations during the initiation of higher frequency oscillations in InGaAs-based Gunn planar diodes has been evidenced and investigated. Accurate measurements showing the evolution of the power spectral density of the device with respect to the applied voltage have been carried out. Such spectra have been obtained in the wide frequency range between 10 MHz and 43.5 GHz, simultaneously covering both the low-frequency noise and the fundamental oscillation peak at some tens of GHz. This provides valuable information to better understand how these fluctuations appear and how these are distributed in frequency. For much higher frequency operation, such understanding can be utilized as a simple tool to predict the presence of Gunn oscillations without requiring a direct detection.