Wide energy level control of InAs QDs using double-capping procedure by MOVPE

摘要

We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski - Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.