Selective MOVPE growth of InAs QDs using double-cap procedure

摘要

Broadband spectrum emission was obtained for self-assembled Stranski-Krastanov (S-K) InAs/InP quantum dots (QDs) grown by selective area low pressure metalorganic vapor phase epitaxy (MOVPE) using the double-cap procedure. Selective area growth using a SiO_2 narrow stripe mask array pattern was carried out to control and widen the emission wavelength range of the QDs in 16 stripe mask array waveguides. The height of the QDs in the multi stacked QD layers was changed using the double-cap procedure, and the strain was controlled by changing the composition of the GalnAs buffer layer under the QDs, which resulted in the broadband spectrum emission of this structure.