Intermixing of Highly-Stacked InAs/InGaAlAs Quantum Dots Grown on InP (311)B Substrate by SiO_2 Sputtering and Annealing Technique

摘要

We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO_2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.