Study on the interface properties and reliability of the electric-double-layer gate dielectric for Hf-In-Zn-O MIS capacitors

摘要

The electrical characteristics and reliability of the Hf-In-Zn-O (HIZO) MIS capacitor with a microporous SiO2-based electric-double-layer (EDL)/HfO2 stack gate dielectrics were investigated. Experimental results indicated that the HfO2 interlayer could effectively improve the interface quality. Moreover, enhanced reliability of the HIZO MISCAP with EDL/HfO2 stack gate was observed with an elevated dielectric breakdown voltage of 4.8 V.