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Composition dependent band gaps of single crystal Cu_2ZnSn(S_xSe_(1-x))_4 solid solutions

机译:单晶Cu_2ZNSN的组成依赖带间隙(S_SSE_(1-x))_ 4固溶溶液

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Single crystals of Cu_2ZnSn(S_xSe_(1-x))_4 (CZTSSe) solid solutions have deen grown by chemical vapor transport technique using Icl_3 as a transport agent. Analyzing the X-ray diffraction patterns reveal that the as-grown CZTSSe solid solutions are crystallized in kesterite structure and the lattice parameters are determined. The S contents of the obtained crystals are estimated by Vegard's law. The composition dependent band gaps of CZTSSe solid solutions are studied by electrolyte electroreflectance (EER) techniques. The band gaps of CZTSSe are evaluated by a lineshape fit of the EER spectra and are found to increase almost linearly with the increase of S content.
机译:Cu_2zNSN(S_XSE_(1-X))_ 4(CZTSSE)固溶体的单晶具有通过化学蒸汽传输技术的Deen,其使用ICL_3作为运输剂。分析X射线衍射图案表明,生长的CZTSSE固溶体在酯晶结构中结晶,并确定晶格参数。所得晶体的含量估计由VEGARD的定律估算。通过电解质电光(eEer)技术研究了CZTSSE固体溶液的组成依赖带间隙。 CZTSSE的带空隙由eER光谱的线斑评估,并且被发现随着S含量的增加而几乎线性增加。

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