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Modeling of High Power Impulse Magnetron Sputtering of Copper

机译:高功率脉冲磁控溅射铜的建模

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A model analysis of a high power impulse magnetron sputtering of copper is presented. A non-stationary global model based on the particle and energy conservation equations in two zones (the high density plasma ring above the target racetrack and the bulk plasma region) was used to calculate time evolutions of the averaged process gas and target material neutral and ion densities, as well as the fluxes of these particles to the target and substrate during a pulse period. The effect of the target power density was studied under the experimental conditions of Anders et al. (2007). The calculated target current waveforms show a long steady state and they are in a good agreement with the experimental results. The analysis of the particle densities shows a transition to a metal dominated discharge plasma for the increasing target power density. The average fraction of target material ions in the total ion flux onto the substrate is more than 90% for the average target power densities higher than 500 W·cm~(-2) in a pulse. The average ionized fraction of target material atoms in the flux onto the substrate reaches 80% for the maximum average target power density of 3 kW·cm~(-2) in a pulse.
机译:提出了高功率脉冲磁控溅射的模型分析。基于两个区域中的粒子和节能方程的非静止全局模型(目标赛道上方的高密度等离子体环和体积等离子体区域)来计算平均过程气体和靶材料中性和离子的时间演进密度,以及这些颗粒在脉冲周期期间对靶和衬底的助焊剂。在Anders等人的实验条件下研究了目标功率密度的效果。 (2007)。计算的目标电流波形显示出长期稳态,它们与实验结果一致。对粒子密度的分析显示到用于增加目标功率密度的金属占状放电等离子体的过渡。对于脉冲中高于500W·cm〜(-2)的平均目标功率密度,总离子通量在基板上的靶材料离子的平均分数大于90%。在脉冲中,在基板上的磁通量中的靶材料原子的平均电离分数达到80%,以脉冲中的3kW·cm〜(-2)的最大平均目标功率密度。

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