Generation and evaluation of graphene depends on the electron irradiation applied to the fullerene

摘要

Graphene is an ideal two-dimensional material was chained to the planar six-member rings of carbon atoms. Electron of graphene behave as Dirac Fermion, this electron is unaffected to impurity scattering. Mobility of graphene with such characteristics is larger than mobility of silicon. But, mass production of graphene technology has not been established. As a new method, we have suggested a method using C_(61)-fullerene and electron beam irradiation. This study is one of many studies for new mass production and exactly patterning of graphene on substrate, this goal is to establish a method that change fullerene to graphene. To create variety of graphene samples by spin coat, anneal, electron irradiation on the silicon-oxide (by change of the dose and annealing temperature), electrical characteristics of graphene are revealed by IV-measurement. As a result, we have confirmed changing fullerene that should be insulator to conductor material.