We present the study of the MnAl alloy thin films on Si and GaAs substrates irradiated by protons beam. Thin films of MnAl alloy were prepared by electron beam evaporation technique using MnAl alloy as target source. These as deposited thin films were irradiated by 250 keV H+ ions in order to stabilize the τ - phase. MnAl thin film on Si substrate becomes ferromagnetic after irradiating at fluence 5 × 10~(16) ions/cm~2. The XRD spectra of MnAl thin films show T-phase (100) and (111) peaks after irradiation. Magnetic hysteresis loops were measured at 300 K. The effects of 250 keV H+ ion irradiation on structural and magnetic properties of MnAl thin films are reported in this paper.
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机译：我们介绍了质子束照射的Si和GaAs基材上的Mnal合金薄膜的研究。通过电子束蒸发技术用Mnal合金作为靶来源制备Mnal合金的薄膜。将其作为沉积的薄膜被250keV H +离子照射，以稳定τ相。在Si衬底上的Mnal薄膜在照射流量5×10〜（16）离子/ cm〜2后变成铁磁性。 Mnal薄膜的XRD光谱显示在照射后的T相（100）和（111）峰。在300k下测量磁滞回路。本文报道了250keV H +离子照射对Mnal薄膜结构和磁性的影响。
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