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L10-ordered MnAl thin films with high perpendicular magnetic anisotropy, and structures and devices made therewith
L10-ordered MnAl thin films with high perpendicular magnetic anisotropy, and structures and devices made therewith
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机译:具有高垂直磁各向异性的L1 0 Sub>阶MnAl薄膜及其结构和器件
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摘要
A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 100 emu/cm3 to about 600 emu/cm3 and a magnetocrystalline anisotropy of at least 1×106 erg/cm. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated in magnetic tunneling junction stacked-film structures that are part of magnetoelectronic circuitry, such as spin-transfer-torque magnetoresistive random access memory circuitry and magnetic logic circuitry. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated into other devices, such as into read/write heads and/or recording media of hard-disk-drive devices.
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机译:包括具有高垂直磁各向异性(PMA)的Llo有序MnAl层的堆叠薄膜结构。在一些实施例中,L10顺序的MnAl层具有约35%至约65%范围内的Mn含量,小于约50nm的厚度,约100emu / cm 3至约600emu / cm 3的饱和磁化强度和磁晶各向异性至少为1×106 erg / cm。在一些实施例中,高PMA Llo有序的MnAl材料被结合在作为磁性电子电路的一部分的磁性隧道结堆叠膜结构中,该磁性电子电路是诸如自旋转移转矩磁阻随机存取存储器电路和磁性逻辑电路的一部分。在一些实施例中,高PMA Llo有序的MnAl材料被结合到其他设备中,例如结合到硬盘驱动器设备的读/写头和/或记录介质中。
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