Amorphous Indium Gallium Zinc Oxide Thin Film Grown by Pulse Laser Deposition Technique

摘要

Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10~(-3) V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10~(18) cm~3, while the Hall mobility of the IGZO thin film was 16 cm~2 V~(-1)S~(-1).