High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition

摘要

Indium zinc oxide films were grown from targets with two different In atomic concentration [In/(In + Zn)] of 40% and 80% by the pulsed laser deposition technique on glass substrates from room temperature up to 100 ℃. X-ray diffraction and reflectometry investigations showed that films were amorphous and dense. Thin films (thickness<100nm) exhibited higher optical transmittance and resistivities than thick films (thickness>1000nm), probably caused by a significant decrease of oxygen vacancies due to atmosphere exposure. Films deposited from the In rich target under an oxygen pressure of 1 Pa exhibited optical transmittance higher than 85%, resistivities around 5-7 x 10~(-4)Ωcm and mobilities in the 47-54 cm~2/Vs range.