Studies On n-ZnO/p-Si Heterojunction Fabricated By Hydrothermal Method

摘要

Pure and Aluminum (Al) doped ZnO nanorods were grown on silicon (Si) substrates by hydrothermal method. The grown samples were characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). FESEM images shows that there is no distinct difference between morphology of Al-doped and undoped nanorods. The pure and Al doped ZnO nanorods were used to fabricate n-ZnO/p-Si p-n heterojunction diodes. Temperature-dependant (313, 473, 523, 573, 623, and 673 K) current voltage (I-V) characteristics for the fabricated diodes are presented in this paper.