Oxygen Partial Pressure on the Structural and Electrical Properties of CdZnO Thin films

摘要

The Cd doped ZnO have versatile applications in the field of solar cells, Optoelectronic devices. The Cd doped ZnO thin films were prepared by reactive dc magnetron sputtering at different O_2 Partial Pressures (1-3sccm) on glass substrate. The structure of the compound was determined by XRD, the mictro structure was studied by FE-SEM, the absorption spectra studies were measured with UV-Vis-NIR spectrometer and electrical properties were studied by four probe method. The optical band gap was variation reported in this study. The minimum resistivity found at PO_2=2.0sccm.