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Effect of external applied electric field on second-order nonlinear optical susceptibilities in Al_xGa_(1-x)N/GaN single quantum well under a constant tilted magnetic field

机译:外部施加电场对恒定倾斜磁场下的al_xga_(1-x)n / gaN单量子的二阶非线性光学敏感性的影响

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摘要

The effect of positive and negative applied electric field along [0001] and [0001] crystal growth direction, respectively, on second-order nonlinear optical susceptibilities under a constant tilted magnetic field in AlGaN/GaN single quantum well has been studied theoretically. The electronic eigen values and their corresponding envelope functions are obtained by solving the effective mass equations in the finite difference method. The analytic expression for the second-order optical susceptibilities such as second-order second harmonic generations and optical rectifications are given in the compact density matrix approach. The second-order optical susceptibilities are found to get blue shifted for both applied electric fields under constant tilted magnetic field since the intersubband energyspacing increases with increasing in external applied electric fields.
机译:在理论上已经研究了正施加在AlGaN / GaN单量子孔中的恒定倾斜磁场下的二阶非线性光学敏感性的阳性和负施加电场的影响。通过在有限差分法中求解有效质量方程来获得电子特征值及其相应的包络功能。以紧凑的密度矩阵方法给出了二阶二阶二阶和光学整流等二阶光学敏感性的分析表达式。发现二阶光学敏感度对于恒定倾斜磁场下的两个施加的电场的蓝色移位,因为在外部应用电场的增加随着外部应用的情况下增加而增加。

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