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Piezoelectric Field Enhanced Second-Order Nonlinear Optical Susceptibilities in Wurtzite GaN/AlGaN Quantum Wells

机译:纤锌矿型GaN / AlGaN量子阱中压电电场增强的二阶非线性光学磁化率

摘要

Second-order nonlinear optical processes including second-harmonic generation, optical rectification, and difference-frequency generation associated with intersubband transitions in wurtzite GaN/AlGaN quantum well (QW) are investigated theoretically. Taking into account the strain-induced piezoelectric (PZ) effects, we solve the electronic structure of the QW from coupled effective-mass Schrodinger equation and Poisson equation including the exchange-correlation effect under the local-density approximation. We show that the large PZ field in the QW breaks the symmetry of the confinement potential profile and leads to large second-order susceptibilities. We also show that the interband optical pump-induced electron-hole plasma results in an enhancement in the maximum value of the nonlinear coefficients and a redshift of the peak position in the nonlinear optical spectrum. By use of the difference-frequency generation, THz radiation can be generated from a GaN/Al(0.75)Ga(0.25)N with a pump laser of 1.55 micron.
机译:从理论上研究了纤锌矿GaN / AlGaN量子阱(QW)中的二次谐波产生,光学整流和与子带间跃迁相关的差频产生的二次非线性光学过程。考虑到应变感应压电(PZ)的影响,我们从耦合的有效质量Schrodinger方程和Poisson方程(包括在局部密度近似下的交换相关效应)求解QW的电子结构。我们表明,QW中的大PZ场打破了约束势能剖面的对称性,并导致了较大的二阶磁化率。我们还表明,带间光泵引起的电子空穴等离子体导致非线性系数最大值的增加和非线性光谱中峰值位置的红移。通过使用差频产生,可以用1.55微米的泵浦激光器从GaN / Al(0.75)Ga(0.25)N产生THz辐射。

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