Structural and Optical Properties of Electrochemically Grown Highly Crystalline Cu_2ZnSnS_4 (CZTS) Thin Films

摘要

We have fabricated kesterite phase films of Cu_2ZnSnS_4 (CZTS) using a single bath electrodeposition process followed by sulfurisation. Morphological analysis using SEM shows that the films have densely packed micron size grains. XRD and Raman spectroscopy confirm that grown films are highly crystalline and kesterite in phase. Band gap of electrochemically deposited films is estimated to 1.51 eV by using UV-Vis absorption spectra. Photoluminescence measurements show a single emission peak at 1.5 eV which corresponds to band to band transition of CZTS film. The electrical conductivity measurements of the films show good ohmic behavior of the contacts and the average conductance value is 50 μS.