Detached phenomenon: its influence on the crystals quality of InSb:Te grown by the VDS technique

摘要

Since 1994, vertical directional solidification (VDS) technique is based on the combined growth principal of the conventional methods, which leads to the detached growth and crystal perfection. InSb:Te bulk crystals grown under detachment showed the highest mobility and physical properties. It reveals the thermocapillary and composition control in Te doped InSb ingots by the influence of detached growth, where dislocation density has been reduced significantly.