Detached Sib-Based Crystal Growth by VDS: Fabrication and Characterization of the Scotty and Moss Devices on INSB VDS- Substrate Operate At 300k

摘要

In this research, Schottky Barrier diode (SBD) and MOS structure fabrication process on substrates (n-InSb, p-InSb) from the detached crystals grown by the vertical directional solidification (VDS) have been reported. An interface layer between the Al-InSb SBD, and Al/Oxide n-InSb MOS-structure had been fabricated and studied. For Sb-based devices - leakage current, generation recombination (g-r), Shockley-Read- Hall (SRH), and series resistance (Rs) are analyzed. The performance of VDS-devices has drastically influenced by the quality of interface, deposited metal (Al) on n-lnSb VDS substrate, and the dielectric layer (oxide) between (Al) and substrate (n-InSb). InSb VDS-substrate status, SBD and MOS parameters are characterized at 300K. The ideality factor (rj) decreases to near unity, while series resistance lowers with increase in InSb crystal quality, it reveals increased barrier height (BH). experiments of device characteristics have been performed at 300K by the C-V, Rs-V (SBD), I-V, C-V, G(w)/w-F, C-F (MOS) methods, and also comparison of VDS-device and traditional-device are discussed.