Effect of Oxygen/Argon Flow Ratio on the Optical Properties of RF Sputtered a-GaInZnO Thin Film

摘要

Transparent oxide semiconductor, a-GaInZnO, thin films were deposited by radio frequency (RF) magnetron sputtering at different oxygen/Argon (O_(2)/Ar) flow ratio on glass substrates. The effect of oxygen content was studied on the transmittance and optical band gap of these thin films. The average transmittance in the visible region decreased with increase in the oxygen content. The optical band gap also decreased with increase in the oxygen content. With increasing oxygen content, the absorption edge shifted to the longer wavelength due to the decreased Burstein-Moss effect.