Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers

摘要

Polycrystalline Indium Oxide (In_(2)O_(3)) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO_(2) served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.