Radiation-Induced Pulse Noise in SOI CMOS Logic

摘要

A comprehensive study on radiation-induced pulse noises in SOI CMOS logic is reviewed. The noise pulses are called single event transients or SETs and becoming a serious source of soft errors in logic systems. As a result of miniaturization of transistors, concern about the soft error problems caused by the SETs are growing not only in special applications for harsh radiation environments like space but also in usual ones used on the ground. It is important to reveal what the SET is in its nature. Measurement techniques and analytical model have been developed for the purpose. They are introduced together with experimental data obtained with test circuits fabricated by a commercial 0.2-μm fully-depleted SOI technology. Issues to be solved for use of SOI technologies in realizing radiation hardened devices are also described with a practical example, or a development process of radiation hardened SOI SRAMs.