FISH SOI MOSFET: An Evolution of the Diamond SOI Transistor for Digital ICs Applications

摘要

This work introduces and studies a new transistor layout style, called Fish SOI MOSFET using 3D numerical simulations, where two trapezes compose the transistor gate area, generating a "smaller than (<)" mathematical signal shape. This innovative layout structure is an evolution of the Diamond SOI MOSFET. The Fish structure was carefully designed to be used in the digital integrated circuits applications, because now its channel length can be implemented with the minimum dimension allowed by the manufacture process, in contrast to Diamond transistor in which this is not possible. The Fish transistor also uses the Longitudinal Corner Effect (LCE) to increase the resultant longitudinal electric field along to the channel length, that results in an improvement in the average carriers drift velocity in the channel, in the drain current, in the transconductance and in the on-state series resistance parameters.