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Improving Megasonic Exposure Uniformity for EUV Mask Substrate Cleaning

机译:改善EUV掩模基板清洁的巨型曝光均匀性

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To achieve surface roughness and flatness requirements, EUV mask substrates made out of low thermal expansion material (LTEM) such as quartz, should undergo chemical mechanical polishing (CMP). This process can generate surface defects such as pits and embedded particles. Megasonic cleaning is widely preferred as the post-polish cleaning technique but must be practiced such that it does not create additional pits. Pit defects are commonly generated by transient cavitation near the surface. This work compares a conventional megasonic nozzle system with a proximity-type radially uniform megasonic system with respect to pit creation. The results show that with the nozzle system, the pits generated are generally located toward the center of the substrate. While the radially uniform proximity system creates a lesser number of pits that are more uniformly distributed.
机译:为了实现表面粗糙度和平坦度要求,由低热膨胀材料(LTEM)如石英制成的EUV掩模基板应经过化学机械抛光(CMP)。该过程可以产生表面缺陷,例如凹坑和嵌入的粒子。巨型清洁广泛优选作为后波兰清洁技术,但必须实践,使得它不会产生额外的凹坑。坑缺陷通常由表面附近的瞬态空化产生。该工作比较了传统的巨型喷嘴系统,其具有近距离型径向均匀的兆音质系统,相对于凹坑创建。结果表明,利用喷嘴系统,产生的凹坑通常位于衬底的中心。虽然径向均匀的接近系统产生更少量的凹坑,但更均匀地分布。

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