Development of Planar Magnetotransistor Design by Three-Dimensional Device-Technological Modeling

摘要

The three-dimensional model of planar dual-collector bipolar magnetotransistor has been developed by the device-technological modeling Synopsys Sentaurus system. Relative current sensitivity of the magnetotransistor in the chosen mode has been calculated. The mechanisms of magnetic sensitivity increase of existing planar magneto-transistors have been considered.