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Extended cold-source Tonks-Langmuir-type model with non-Boltzmann-distributed electrons

机译:扩展冷源TONKS-LANGMUIR型模型,具有非Boltzmann分布式电子

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A general formalism for calculating the potential distribution <& (z) in the quasiheUtral region of a Tonks-Langmuir (TL) -type model allowing for arbitrary cold ion source's and arbitrary electron distributions is presented. The kinetic concept of "cbllision/sink/source (CSS) -free electron trajectories (characteristics)" is extensively used Two types of electron populations are distinguished: the "type-t" ones (populating the "trapped" characteristics, which do not intersect the walls and close on themselves) and the ''type-p" ones (populating the "passing" ones, which start out at one of the walls1 and end at the other). The. potential "in-the plasma region satisfies a- "plasma equation'' of the form n~i {Φ}=n~e (Φ), with the electron density n~e (Φ) given and the ion density n~i>{Φ} expressed in terms of trajectory integrals of, the+ion kinetic equation. While previous TL-type models, including the "classical" TL model i[l], were approximated by Maxwellian [2] or bi-Maxwellian [3] electron velocity distribution functions (VPFs), which imply zero CSS terms ("Vlasovian electrons") and electron currents, we here propose a more general class of electron VPFs allowing for non-zero CSS terms ("non-Vlasovian electrons") and electron currents inside the plasma region. The sheath-edge and floating-wall potentials are calculated by balancing the ion and electron current densities at the sheath-edge singularities. In a first detailed application, Vlasovian electrons are assumed for which the type-t and type-p VPFs are "inner" and "outer" cut-off Maxwellians, respectively, with different amplitudes and "formal" temperatures. For the special case of equal amplitudes and formal temperatures, the classical Boltzmann electron distribution is formally retrieved. Special cases with other amplitude and formal-temperature ratios show significant deviations from the classical Maxwellian case. This work is a first attempt at introducing electron VDFs different. from Maxwellian or bi-Maxwellian VPFs, leading to the conclusion that substantial efforts'will be required in the future to arrive at more realistic electron VDFs. The water-bag distribution function for kinetic modeling
机译:提出了一种用于计算允许任意冷离子源和任意电子分布的TONKS-LANGMUIR(TL)型模型的Quasiheutral区域中的潜在分布<和(z)的一般形式主义。 “CBLlision / Prop / Source(CSS) - 免费电子轨迹(特性)”的动力学概念广泛使用两种类型的电子群体:“T型”(填充“陷阱”特征,哪些不与墙壁相交并关闭自己)和“类型-P”(填充“传递”的墙壁(填充“传递”),该“传递”在其中一个墙壁上并在另一个墙壁上结束)。。潜在“等离子体区域满足N〜I {φ} = n〜e(φ)的形式的A-“等离子体等式”,具有给定的电子密度n〜e(φ)和以尺寸表示的离子密度n〜i> {φ} +离子动力学方程的轨迹积分。虽然以前的TL型模型,包括“经典”TL Model i [L],由Maxwellian [2]或Bi-Maxwellian [3]电子速度分布功能(VPF)近似,这意味着Zero CSS术语(“Vlasovian电子”)和电子电流,我们在此提出了一种更一般的电子VPF,允许非零CSS术语(“非Vlasovian E拉斯特朗“)和等离子体区域内的电子电流。通过在鞘边缘奇异性的离子和电子电流密度平衡离子和电子电流密度来计算护套边缘和浮动壁电位。在第一详细应用中,假设Vlasovian电子分别是Type-T和Type-P VPFS是“内部”和“外部”切断的迈克韦斯,具有不同的幅度和“正式”温度。对于特殊情况,具有相等振幅和正式温度的特殊情况,正式检索典型的玻璃板电子分布。具有其他幅度和正式 - 温度比的特殊情况显示出与古典最大世界的情况有重大偏差。这项工作是第一次尝试介绍不同的电子VDFS。来自Maxwellian或Bi-Maxwellian VPF,导致结论是未来需要大量努力的努力,以达到更现实的电子VDFS。动力学建模的水袋分配功能

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