The electron g factor for one-band and two-band extended models of the electron energy spectrum

摘要

At present, explicit expressions for the electron g factor in crystals are known only for the following two cases: when the Fermi energyε{sub}F of the elections lies at the edge of the electron energy band, ε(k{sub}(ex)), or when the electron energy spectrum of a crystal can be approximated by the two-band model. Here we obtain explicit formulas for the g factor in situations when the Fermi levelε{sub}F is close to but does not coincide with the band edge and when the two-band model of the spectrum includes small corrections from other electron energy bands. In particular, we derive expressions that describe the dependences of the g factor on ε{sub}F -ε(k{sub}(ex)) and on the magnetic field direction for doped semiconductors. The results are applied to III-V semiconductors and to bismuth.