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Extended Tonks-Langmuir-type model with non-Boltzmann-distributed electrons and cold ion sources

机译:具有非玻尔兹曼分布电子和冷离子源的扩展Tonks-Langmuir型模型

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摘要

A general formalism for calculating the potential distribution Φ(z) in the quasineutral region of a new class of plane Tonks-Langmuir (TL)-type bounded-plasma-system (BPS) models differing from the well-known 'classical' TL model (Tonks, L. and Langmuir, I. 1929 A general theory of the plasma of an arc. Phys. Rev. 34, 876) by allowing for arbitrary (but still cold) ion sources and arbitrary electron distributions is developed. With individual particles usually undergoing microscopic collision/sink/source (CSS) events, extensive use is made here of the basic kinetic-theory concept of 'CSS-free trajectories' (i.e., the characteristics of the kinetic equation). Two types of electron populations, occupying the 'type-t' and 'type-p' domains of electron phase space, are distinguished. By definition, the type-t and type-p domains are made up of phase points lying on type-t ('trapped') CSS-free trajectories (not intersecting the walls and closing on themselves) and type-p ('passing') ones (starting at one of the walls and ending at the other). This work being the first step, it is assumed that ? ≡ λ D/l → 0+ (where λ D and l are a typical Debye length and a typical ionization length respectively) so that the system exhibits a finite quasineutral 'plasma' region and two infinitesimally thin 'sheath' regions associated with the 'sheath-edge singularities' | dΦ/dz| z→±zs → ∞. The potential in the plasma region is required to satisfy a plasma equation (quasineutrality condition) of the form n~i {Φ} = n~e(Φ), where the electron density n~e (Φ) is given and the ion density n~i {Φ} is expressed in terms of trajectory integrals of the ion kinetic equation, with the ions produced by electron-impact ionization of cold neutrals. While previous TL-type models were characterized by electrons diffusing under the influence of frequent collisions with the neutral background particles and approximated by Maxwellian (Riemann, K.-U. 2006 Plasma-sheath transition in the kinetic Tonks-Langmuir model. Phys. Plasmas 13, 063508) or bi-Maxwellian (Godyak, V. A. et al. 1995 Tonks-Langmuir problem for a bi-Maxwellian plasma. IEEE Trans. Plasma Sci. 23, 728) electron velocity distribution functions (VDFs), which satisfy the zero-CSS-term (Vlasov) kinetic equation and imply zero electron currents, we here propose a more general class of electron VDFs allowing, in an approximate manner, for non-zero CSS terms and finite electron currents inside the plasma region. The sheath-edge and floating-wall potentials are calculated by balancing the ion and electron current densities at sheath-edge singularities. In a first detailed application, the type-t and type-p electron VDFs are assumed to be 'inner' and 'outer' cut-off Maxwellians respectively, with different amplitudes and 'formal' temperatures, implying the perfectly CSS-free limit. For the special case of equal type-t and type-p electron VDF amplitudes and formal temperatures, the classical Boltzmann distribution for electrons is formally retrieved. Special cases with other amplitude and formal-temperature ratios show significant deviations from the classical case.
机译:一种不同于已知的经典TL模型的新型平面Tonks-Langmuir(TL)型有界等离子体系统(BPS)模型的准中性区域中的电势分布Φ(z)的一般形式计算(Tonks,L。和Langmuir,I.,1929,电弧等离子的一般理论,Phys.Rev.34,876)通过允许任意(但仍然是冷的)离子源和任意电子分布而得到发展。由于单个粒子通常会发生微观碰撞/沉没/源(CSS)事件,因此这里广泛使用了``无CSS轨迹''的基本动力学理论概念(即动力学方程的特征)。区分了占据电子相空间的“ t型”和“ p型”域的两种电子种群。根据定义,类型t和类型p域由位于无CSS的t型(“被困”)轨迹(不与墙相交并自身闭合)和p型(“ passing”)上的相点组成。 )(从一堵墙开始,到另一堵墙结束)。这项工作是第一步,假设? DλD / l→0+(其中λD和l分别是典型的德拜长度和典型的电离长度),因此系统显示出一个有限的拟中性“等离子体”区域和两个与“鞘缘奇异性” | dΦ/ dz | z→±zs→∞要求等离子体区域中的电势满足形式为n〜i {Φ} = n〜e(Φ)的等离子体方程(准中性条件),其中给出电子密度n〜e(Φ)并给出离子密度n〜i {Φ}用离子动力学方程的轨迹积分表示,其中离子通过冷中性分子的电子碰撞电离而产生。以前的TL型模型的特征是电子在与中性背景粒子频繁碰撞的影响下扩散,并由Maxwellian近似(Riemann,K.-U. 2006在动力学Tonks-Langmuir模型中进行等离子-鞘过渡)。 13、063508)或双Maxwellian(弗吉尼亚州Godyak等人的1995年双Maxwellian等离子体的Tonks-Langmuir问题。IEEETrans.Plasma Sci。23、728)电子速度分布函数(VDF),满足零- CSS项(Vlasov)动力学方程式和隐含的零电子电流,在此我们提出一种更通用的电子VDF类,以近似的方式允许等离子区域内的非零CSS项和有限的电子电流。通过平衡鞘边缘奇异点处的离子和电子电流密度来计算鞘边缘和浮壁电势。在第一个详细的应用程序中,假定类型t和类型p电子VDF分别是“内部”和“外部”截止麦克斯韦,具有不同的幅度和“正式”温度,这意味着完全没有CSS限制。对于T型和P型电子的VDF振幅和形式温度相等的特殊情况,正式检索了经典的电子玻耳兹曼分布。具有其他振幅和形式温度比的特殊情况显示出与经典情况明显不同。

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