Room temperature imaging above one terahertz by field effect transistor as detector

摘要

GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 µm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.