Room-temperature terahertz detectors fabricated using graphene field-effect transistors

摘要

Terahertz radiation penetrates many common dielectric materials that are opaque to visible and mid-infrared light, allowing for imaging of objects and identification of substances through their molecular fingerprints. A significant factor limiting the exploitation of this effect is the slow response of commercial terahertz detectors. Describing a new approach to overcome this problem, L. Vicarelli from Istitu-to Nanoscienze-CNR and Scuola Normale Superiore, Italy, D. Coquillat from Uni-versite Montpellier and CNRS, France, A. Lombardo from Cambridge University, UK, and their colleagues have recently demonstrated room-temperature terahertz detectors based on antenna-coupled graphene field-effect transistors (GFETs).