Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell

机译：InGaAs / GaAs量子点太阳能电池器件特性的温度效应

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We investigated the temperature effect on the electrical properties of an In0.5Ga0.5As/GaAs QD solar cell, leading to a better understanding of the basic cell characteristics influenced by QD incorporation which is of great importance for future design of high efficiency QD solar cells.

机译：我们研究了IN 0.5 AS / GAAS QD太阳能电池的电气性能的温度效应，从而更好地了解受QD Concorporation影响的基本细胞特征这对于未来的高效QD太阳能电池设计非常重要。

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《Annual Meeting of the IEEE Photonics Society》|2010年||共2页
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3. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices [J] . Asano Tetsuya, Fang Zhaoqiang, Madhukar Anupam Journal of Applied Physics . 2010,第7期

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4. Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell [C] . 23rd Annual Meeting of the IEEE Photonics Society . 2010

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Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell

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