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Single source precursor approach to prepare tinsulfide nanocrystallites and thin films

机译:制备硫化锡纳米晶体和薄膜的单源前体方法

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Nanocrystalline tin sulfides of various morphologies have been prepared by thermal and solvothermal decomposition of Bz_3SnCI(L) (L= benzaldehyde thiosemicarbazone). The precursor was characterized by elemental analysis, IR and NMR (~1H and ~(13)C) spectroscopy and thermogravimetric analysis. This precursor was also used for the deposition of SnS thin films by aerosol assisted chemical vapour deposition technique. As prepared nanocrystallites and thin films were characterized by powder X-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray analysis techniques. TEM and SEM images reveal that the morphologies of tin sulfides depend on the method of preparation and the growth temperature.
机译:通过BZ_3SNCI(L)(L =苯甲醛硫代噻虫鸟)的热和溶液分解制备各种形态的纳米晶锡硫化物。通过元素分析,IR和NMR(〜1H和〜(13)c)光谱和热重分析。该前体还用于通过气溶胶辅助化学气相沉积技术沉积SNS薄膜。作为制备的纳米晶体和薄膜以粉末X射线衍射,透射电子显微镜(TEM),选择的区域电子衍射,扫描电子显微镜(SEM)和能量分散X射线分析技术。 TEM和SEM图像表明,硫化锡的形态取决于制备方法和生长温度。

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