MAGNETORESISTANCE BEHAVIORS OF UNDOPED AND N-DOPED GRAPHENE GROWN BY CVD METHOD

摘要

In this paper, the magnetoresistance behaviors of undoped and N-doped graphene were investigated in different external magnetic fields. After synthesized by chemical vapor deposition (CVD) method at ambient pressure, the graphene films were transferred to silicon/silicon dioxide substrates and deposited two Al pads to improve the ohmic contact. Magneto-resistance measurements show that both resistances of the undoped and N-doped graphene films decrease with the increasing applied magnetic field, which is different from the behavior of graphite. As the magnetoresistance change of undoped graphene is larger than the N-doped one, which seems that the undoped graphene may be a better candidate for MRAM.