首页> 外文会议>International Solid-State Sensors, Actuators and Microsystems Conference >OUT-OF-PLANE MICROWIRE FORCE SENSOR ARRAYS WITH EMBEDDED P-N DIODES BY SELECTIVE VAPOR-LIQUID-SOLID GROWTH
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OUT-OF-PLANE MICROWIRE FORCE SENSOR ARRAYS WITH EMBEDDED P-N DIODES BY SELECTIVE VAPOR-LIQUID-SOLID GROWTH

机译:通过选择性气相 - 固体生长,平面外微射线力传感器阵列具有嵌入式P-N二极管

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We proposed a concept of force sensor arrays with vertically integrated, out-of-plane, high-aspect ratio, IC-compatible silicon wires. The proposed structure gives whisker-like force sensor arrays that one end of the wire is affixed on the substrate with another end free to be touched, even though the sensing wire-element has two terminal electrodes. We fabricated the sensor array based on 3-μm-diameter, 30-μm-length p-silicon wires (1 Ω·cm) on n-silicon substrate (3-6 Ω·cm), that results in the p-n diode systems at each wire-base. When the individual wire-tip contacts with an object, the wire exhibits the change in the electrical conductance of both the p-silicon wire body and the embedded p-n diode due to the compressive force. The proposed microwire force sensor array has the possibility for numerous measurements, such as multisite contact force, shear force, surface roughness, slip, etc., with small detection area (~20 μm~2) and high spatial resolution (10-100 μm in pitch). This wire-based force sensor could also be used in fingertips of a robot hand that performs the grasping and the manipulating motions to handle objects.
机译:我们提出了具有垂直整合,外的平面中,高宽比,IC-兼容硅线力传感器阵列的概念。所提出的结构给出了晶须状力传感器阵列,所述金属丝的一个端部贴有自由地触及另一端在基片上,即使感测线元件具有两个终端电极。我们制造了基于在n-型硅基板(3-6Ω·cm)的微米直径的3,30微米长度的p-硅线(1Ω·cm)的传感器阵列,其导致的pn二极管系统在每个导线碱。当与对象的单独的线尖接触时,丝表现在p硅丝主体和嵌入的p-n二极管两者的电导的变化,由于压缩力。所提出的微丝力传感器阵列具有用于大量的测量,如多站点接触力,剪切力,表面粗糙度,滑动等,与小检测区域(约20微米〜2)和高空间分辨率的可能性(10-100微米在间距)。此基于有线的力传感器也可以在机械手执行把持的指尖和操纵运动到手柄的对象使用。

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