IN SITU AND REAL TIME STUDIES OF WET CHEMICAL SILICON SURFACE CLEANING REACTIONS

摘要

In this paper electrochemical Open Circuit Potential (OCP) measurements for in-situ characterisation of wet silicon surface cleaning processes is discussed. This technique provides unique information about the evolution of semiconductor surface reactions in wet chemical environments and allows to study the kinetics of oxidation and etching processes in real time. Very good agreement between results obtained by this technique and results from MIR-FTIR (Multiple Internal Reflection -Fourier Transform Infrared Spectroscopy), XPS (Photoelectron Spectroscopy), Spectroscopic Ellipsometry (SE) and contact angle studies were found and are presented in this paper.